The Netherlands-based Nexperia has obtained a car certificate for a SISFTS (SIC) group of applications such as plane on board (OBC) and traction transformers, as well as DC-DC transformers, and heating of air formation systems (HVAC).
These devices (NSF030120D7A0-S, NSF040120D7A1-S, NSF060120D7A0-S), which offer RDS values (ON) from 30, 40 and 60 Mω and Cerdicales -f-MERIT (FOM), were previously presented in the industrial class and are now granted AWEC-Q101.
The keys are found in the D2Pak-7 package, which is increasingly installed on the surface, which are more suitable for automated assembly processes than the devices through the hole.
RDS (ON) is an important performance teacher for SIC MOSFTS because it affects delivery losses. However, the focus on the nominal value neglects the fact that it can increase by more than 100 % with increased temperature of devices, which leads to a significant increase in delivery losses. The temperature stability is more important when using SMD package techniques instead of the aperture technology since the devices are cooled through PCB.
Nexperia has guaranteed that the new MOSFTS provides the temperature stability, so that the nominal value of RDS (ON) increases by only 38 % over the operating temperature of 25 ° C to 175 ° C.
“This feature allows more energy from the specific Nexperia Sic MosFet devices compared to RDS (ON) devices that have been classified in the same way, and providing a clear cost feature for customers at the level of semiconductors. From Business Group Wide Bandgap, IGBT & MDULES (WIM) in Nexperia.
Nexperia plans to version of cars qualified from 17 Mω and 80 Mω RDS (on) Sic Mosfets this year.
Source: Nexperia
